In this paper, we explore the far-field radiative thermal rectification potential of common materials such as metals,ceramics and doped semi-conductors using radiative and thermo-radiative properties extracted from literature. Seventeen different materials are considered. The rectification coefficient is then calculated for 136 pairs of materials; each pair can be used for the two terminals of a radiative thermal diode. A thermal bias of 200 K is considered. The choice of materials and thermal bias value are only bound by data availability in literature. Obtained results, highlight new candidate materials for far-field radiative thermal rectification. They also highlight materials where thermal rectification is not negligible and should be considered with care in heat transfer calculations when considering systems subject to a comparable thermal bias and where these materials are used. Among the materials studied, undoped Indium Arsenide (InAs) shows great promise to be employed for thermal rectification, with a thermal rectification ratio reaching 96.35% in combination with other materials. Obtained results pave the way for an optimized design of thermal radiation control and management devices such as thermal diodes.

在本文中，我们利用从文献中提取的辐射和热辐射特性，探索了诸如金属，陶瓷和掺杂半导体等常见材料的远场辐射热整流潜力。考虑了十七种不同的材料。然后计算出136对材料的整流系数。每对可用于辐射热敏二极管的两个端子。考虑200 K的热偏置。材料的选择和热偏置值仅受文献中数据可用性的限制。获得的结果突出了用于远场辐射热整流的新候选材料。它们还重点介绍了热精馏不可忽略的材料，在考虑具有可比性热偏置的系统以及使用这些材料的系统时，在传热计算中应谨慎考虑。在研究的材料中，未掺杂的砷化铟（InAs）有望用于热精馏，与其他材料结合使用时，热精馏率达到96.35％。获得的结果为热辐射控制和管理设备（如热敏二极管）的优化设计铺平了道路。