A new heteromaterial planar-gate superjunction insulated-gate bipolar transistor (HG IGBT) is proposed herein. It consists of stepped gate oxides with thickness of 50 nm, 100 nm, and 150 nm. The gate of the proposed structure is constructed using two materials with different workfunction in a triple-segment polygate configuration, connected via metal on the top. The first and last segment consist of the higher-workfunction material (\(P^{+}\) poly) while the mid segment is formed by a lower-workfunction material (\(N^{+}\) poly). The first \(P^{+}\) poly gate near the emitter with a thin (50 nm) oxide layer enables better control over charge carriers in the channel. In addition, the last \(P^{+}\) poly gate with a thicker (150 nm) oxide layer results in a reduction of the gate-to-collector capacitance. Technology computer-aided design (TCAD) simulation results show that the proposed device offers a 23%, 58%, and 22% reduction in the area-specific on resistance (\(R_{{\mathrm {on}}} \cdot A\)), switching delay, and turn-off time, respectively. Additionally, the device exhibits a 44.4% improvement in the peak transconductance for given breakdown voltage (BV). Furthermore, the off-state energy loss and on-state voltage drop are reduced by 38% and 22%, respectively. It is also observed that the proposed device offers an improved figure of merit (FOM) as compared with the conventional structure.

本文提出了一种新型的异质材料平面栅超结绝缘栅双极晶体管（HG IGBT）。它由厚度分别为50 nm，100 nm和150 nm的阶梯状栅极氧化物组成。所提出的结构的浇口由三段多浇口配置的两种具有不同功函数的材料构成，并通过顶部的金属连接。第一个和最后一个片段由功函数较高的材料（\（P ^ {+} \）多边形）组成，而中间片段由功函数较低的材料（\（N ^ {+} \）多边形）组成。靠近发射极的第一个\（P ^ {+} \）多晶硅栅极具有薄的（50 nm）氧化层，可以更好地控制沟道中的载流子。此外，最后一个\（P ^ {+} \）具有较厚（150 nm）氧化层的多晶硅栅极会降低栅极到集电极的电容。技术计算机辅助设计（TCAD）仿真结果表明，所建议的器件可将电阻率的面积比降低23％，58％和22％（\（R _ {{\ mathrm {on}}} \ cdot A \）），切换延迟和关闭时间。此外，对于给定的击穿电压（BV），该器件的峰值跨导性能提高了44.4％。此外，关闭状态的能量损失和打开状态的电压降分别降低了38％和22％。还观察到，与常规结构相比，所提出的装置提供了改进的品质因数（FOM）。