The effect of gamma ( $\gamma $ )-irradiation on AlGaN-based light-emitting diodes (LEDs) in the short-wavelength ultraviolet (UVC, 210–280 nm) spectral range under electrical stress is characterized by electroluminescence and current–voltage measurement. Different from previous reports that $\gamma $ -irradiation can hardly damage nitride devices, we observe that the optical power decreases and leakage current increases obviously after electrical stress under $\gamma $ -irradiation. To delve into the nature of degradation, variation of defects is studied using temperature-dependent low-frequency noise measurement. After stress, the ~0.78-eV defects attributed to N antisite are generated and lead to device degradation, which is accompanied by a reduction of the intrinsic Ga vacancy with an energy level of ~0.38 eV. The variation of defects after stress in $\gamma $ -irradiated environment is more evident than that in nonirradiated environment, which is well corresponding to the performance degradation behavior. In conclusion, $\gamma $ -irradiation is found to accelerate degradation induced by electrical stress, and the study can help improve irradiation resistance in AlGaN-based UVC LEDs.

中文翻译：

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电应力下基于AlGaN的UVC LED中的伽马辐照加速降解

伽玛（ $ \伽马$ 电致发光和电流-电压测量的特点是在电应力下在短波长紫外线（UVC，210-280 nm）光谱范围内对基于AlGaN的发光二极管（LED）进行辐照。与以前的报告不同 $ \伽马$ -辐照几乎不会损坏氮化物器件，我们观察到在电应力下，光功率降低，漏电流明显增加 $ \伽马$ -辐射。为了探究退化的性质，使用与温度有关的低频噪声测量方法来研究缺陷的变化。应力后，会产生归因于N反位点的〜0.78-eV缺陷，并导致器件性能下降，同时伴随着〜0.38 eV能级的固有Ga空位降低。应力作用后缺陷的变化 $ \伽马$ -辐照环境比非辐照环境更明显，这与性能下降行为非常吻合。综上所述， $ \伽马$ 发现辐照会加速由电应力引起的退化，这项研究可以帮助提高AlGaN基UVC LED的辐照电阻。