In this work, a novel current‐mode filter is presented including a PMOS grounded capacitor and a metal insulator metal structure (MIM‐cap). Proposed filter's cut‐off frequency can be easily adjusted from 10 up to 35 MHz. The wide tuning range of the proposed filter is designed to cover the need of baseband filter in the high‐frequency band and wireless applications such as CDMA, IEEE802.11a/g, IEEE 802.11b, and IEEE 802.11n. In addition, the proposed filter is designed by using a design methodology employing polynomial regressive models of small signal parameters of transistors to provide design accuracy as high as possible. Designed filter structure has layout with 52.1 μm × 62.6 μm chip area, and post‐layout simulations are given extensively to prove performance of the filter. Furthermore, 1‐dB compression point and IIP3 analyses are highlighted to observe linearity of band‐pass output of the filter structure. Also, input‐referred noise characteristics of the filter outputs are investigated to overcome thermal noise effects worsening the performance for a wide range of operating frequency interval. Provided results show that the proposed filter scheme brings a promising opportunity to designers for the high‐frequency region operations.

中文翻译：

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用于高频段应用的电流模式MOSFET-C模拟滤波器

在这项工作中，提出了一种新颖的电流模式滤波器，包括一个PMOS接地电容器和一个金属绝缘体金属结构（MIM-cap）。所建议的滤波器的截止频率可以很容易地从10 MHz调节到35 MHz。拟议滤波器的宽调谐范围旨在满足高频带和无线应用（例如CDMA，IEEE802.11a / g，IEEE 802.11b和IEEE 802.11n）中基带滤波器的需求。另外，通过使用采用晶体管的小信号参数的多项式回归模型的设计方法来设计所提出的滤波器，以提供尽可能高的设计精度。设计的滤波器结构具有52.1μm×62.6μm芯片面积的布局，并且广泛给出布局后仿真以证明滤波器的性能。此外，突出显示1dB压缩点和IIP3分析，以观察滤波器结构的带通输出的线性度。另外，输入-研究了滤波器输出的参考噪声特性，以克服热噪声影响，从而在较宽的工作频率间隔范围内使性能恶化。提供的结果表明，所提出的滤波器方案为设计人员提供了在高频区域操作的有希望的机会。