Applied Physics Express ( IF 2.3 ) Pub Date : 2021-02-12 , DOI: 10.35848/1882-0786/abe1e0 Hisashi Sumikura 1, 2 , Tomonari Sato 3 , Akihiko Shinya 1, 2 , Masaya Notomi 1, 2
We measured time-resolved mid-infrared photoluminescence (PL) from highly strained InAs/InGaAs quantum wells (QWs) grown on InP substrates with a wavelength up-conversion technique. The InAs QWs at 4K exhibit a narrow PL peaked at a wavelength of 2.125μm and a PL lifetime as long as 1.1ns, which supports high homogeneity of the QW thickness and few defects. As the pump fluence increases, a fast PL decay appears within the first 200ps due to Auger recombination. The temperature dependence of the PL intensity and PL decay reveals interfacial nonradiative trap states in the QWs.
中文翻译:
InP衬底上生长的高度应变的InAs / InGaAs量子阱的时间分辨中红外光致发光
我们使用波长上转换技术从生长在InP衬底上的高度应变的InAs / InGaAs量子阱(QW)中测量了时间分辨的中红外光致发光(PL)。在4K中的InAs量子阱表现出窄的PL峰值在2.125波长μ m和一个PL寿命只要1.1ns,它支持QW厚度和缺陷少的高均匀性。随着泵注量的增加,由于俄歇复合,在最初的200ps内会出现快速PL衰减。PL强度和PL衰减的温度依赖性揭示了量子阱中的界面非辐射阱态。