Antiferromagnets can encode information in their ordered magnetic structure, providing the basis for future spintronic devices^1,2,3. The control and understanding of antiferromagnetic domain walls, which are the interfaces between domains with differing order parameter orientations, are key ingredients for advancing antiferromagnetic spintronic technologies. However, studies of the intrinsic mechanics of individual antiferromagnetic domain walls are difficult because they require sufficiently pure materials and suitable experimental approaches to address domain walls on the nanoscale. Here we nucleate isolated 180° domain walls in a single crystal of Cr₂O₃, a prototypical collinear magnetoelectric antiferromagnet, and study their interaction with topographic features fabricated on the sample. We demonstrate domain wall manipulation through the resulting engineered energy landscape and show that the observed interaction is governed by the surface energy of the domain wall. We propose a topographically defined memory architecture based on antiferromagnetic domain walls. Our results advance the understanding of domain wall mechanics in antiferromagnets.

反铁磁体可以在其有序的磁性结构中编码信息，为未来的自旋电子器件^1,2,3提供基础。反铁磁畴壁的控制和理解是具有不同顺序参数方向的畴之间的界面，是推进反铁磁自旋电子技术的关键因素。然而，研究单个反铁磁畴壁的内在力学是困难的，因为它们需要足够纯的材料和合适的实验方法来解决纳米尺度的畴壁问题。_{在这里，我们在 Cr 2} O ₃单晶中成核了孤立的 180° 畴壁，原型共线磁电反铁磁体，并研究它们与样品上制造的地形特征的相互作用。我们通过由此产生的工程能量景观展示了畴壁操纵，并表明观察到的相互作用受畴壁的表面能控制。我们提出了一种基于反铁磁畴壁的拓扑定义存储器架构。我们的研究结果促进了对反铁磁体中畴壁力学的理解。