The linewidth enhancement factor of wurtzite (WZ) hybrid green InGaN/MgZnO quantum well (QW) lasers with zero internal field was investigated theoretically by using a non-Markovian gain model with many-body effects. These results are compared with those for WZ conventional InGaN/GaN QW structures. For both QW structures, the linewidth enhancement factor gradually increases with increasing peak-gain coefficient. On the other hand, the InGaN/MgZnO QW structure shows a lower linewidth enhancement factor than a conventional InGaN/GaN QW structure. This can be explained by the fact that the optical matrix elements for the InGaN/MgZnO QW structure are significantly enhanced in comparison with the optical matrix elements for the conventional InGaN/GaN QW structure due to the disappearance of the internal field.

利用具有多体效应的非马尔可夫增益模型，从理论上研究了具有零内场的纤锌矿（WZ）混合绿色InGaN / MgZnO量子阱（QW）激光器的线宽增强因子。将这些结果与WZ传统InGaN / GaN QW结构的结果进行了比较。对于两种QW结构，线宽增强因子都随着峰值增益系数的增加而逐渐增加。另一方面，与常规的InGaN / GaN QW结构相比，InGaN / MgZnO QW结构显示出较低的线宽增强因子。这可以通过以下事实来解释：由于内部场的消失，与用于常规InGaN / GaN QW结构的光学矩阵元件相比，用于InGaN / MgZnO QW结构的光学矩阵元件显着增强。