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Heat-assisted μ-electrical discharge machining of silicon
The International Journal of Advanced Manufacturing Technology ( IF 3.4 ) Pub Date : 2021-02-12 , DOI: 10.1007/s00170-021-06734-y
Noor Dzulaikha Daud , Farah Afiqa Mohd Ghazali , Fatimah Khairiah Abd Hamid , Marwan Nafea , Tanveer Saleh , Pei Ling Leow , Mohamed Sultan Mohamed Ali

Micro-electrical discharge machining (μEDM) is an unconventional machining method that is suitable for machining of conductive materials including highly doped silicon (Si) wafers. This paper reports a novel method of heat-assisted μEDM machining of Si wafers by varying the temperature to increase the electrical conductivity of Si. In order to achieve this condition, a ceramic heater is used to heat the Si wafers within the temperature range of 30–250 °C. In this study, the machining performances in terms of the material removal rate, tool wear rate, surface quality, and materials characterization have been investigated accordingly. The machining performance of p-type (1–10 Ω cm) Si wafers was investigated to machine a cavity based on different temperatures with a constant discharge energy of 50 μJ and a feed rate of 50 μm/min. The results indicated that increasing the machining temperature allowed achieving a higher material removal rate, lower tool wear rate, and lower surface roughness. The highest material removal rate of 1.43 × 10−5 mm3/s and a surface roughness of 1.487 μm were achieved at 250 °C. In addition, the material removal rate increased by a factor of ~16 times compared to the results obtained at the lowest temperature, 30 °C, and the Raman spectroscopy analysis revealed that no significant changes occurred in the Si structure before and after machining.



中文翻译:

硅的热辅助μ放电加工

微放电加工(μEDM)是一种非常规的加工方法,适用于加工包括高掺杂硅(Si)晶片的导电材料。本文报道了一种通过改变温度以增加Si的电导率来对硅片进行热辅助μEDM加工的新方法。为了达到这一条件,使用陶瓷加热器在30–250°C的温度范围内加热Si晶片。在这项研究中,相应地研究了在材料去除率,工具磨损率,表面质量和材料特性方面的加工性能。研究了p型(1–10Ωcm)硅晶片的加工性能,以基于不同温度的型腔加工,恒定放电能量为50μJ,进给速度为50μm/ min。结果表明,提高加工温度可以实现更高的材料去除率,更低的刀具磨损率和更低的表面粗糙度。最高材料去除率1.43×10-5毫米3 /秒和1.487微米的表面粗糙度在250实现℃。此外,与在最低温度30°C下获得的结果相比,材料去除率提高了约16倍,并且拉曼光谱分析表明,加工前后硅结构没有发生明显变化。

更新日期:2021-02-15
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