The challenges in the field of electrical conductive coatings have stimulated us to investigate the effects of atmospheric pressure plasma jet irradiation on a conductive film surface. We report the surface modifications of Cu-TiC thin film as a function of Ar plasma irradiation (up to 25 min). Cu-TiC thin film is synthesized by a modified sol–gel technique and deposited on quartz glass. A decrease in DC static resistance (~ 2kΩ to ~ 600Ω) and surface electrical resistivity (8.05–6.12) mΩ.m is observed post plasma irradiation. The enhancements of hydrophilicity and surface free energy (39.66–72.43) mN/M have been explored from the contact angle measurements. The particle agglomeration in surface topography as observed from the scanning electron microscopy images has major contributions in the increase of average surface roughness (~ 0.46 nm to ~ 7.6 nm) in the plasma treated films, as obtained from the atomic force microscopy analysis. The energy-dispersive X-ray spectroscopy analysis has revealed a uniform chemical homogeneity of the constituent elements throughout the surface, but oxygen weight % is reduced from 25 to 7% after plasma irradiation. The X-ray diffraction pattern and fast fourier transform analysis depict the polycrystalline structure of the films. We propose this technique for optimizing the conductive surface parameters of Cu-TiC films without disrupting the chemical modifications.

导电涂层领域的挑战促使我们研究大气压等离子体射流辐射对导电膜表面的影响。我们报道了Cu-TiC薄膜的表面改性与Ar等离子体辐射（长达25分钟）的关系。Cu-TiC薄膜是通过改良的溶胶凝胶技术合成的，并沉积在石英玻璃上。在等离子体照射后，观察到直流静电阻（〜2kΩ至〜600Ω）和表面电阻率（8.05-6.12）mΩ.m减小。亲水性和表面自由能（39.66–72.43）mN / M的提高已通过接触角测量进行了探索。从扫描电子显微镜图像观察到的表面形貌中的颗粒团聚在平均表面粗糙度（〜0.46 nm至〜7）的增加中起主要作用。如从原子力显微镜分析获得的那样，在等离子体处理过的膜中形成6nm）。能量色散X射线光谱分析表明，整个表面的组成元素具有均匀的化学均一性，但是等离子照射后，氧的重量百分比从25％降低至7％。X射线衍射图和快速傅立叶变换分析描绘了薄膜的多晶结构。我们提出了一种在不破坏化学修饰的情况下优化Cu-TiC膜的导电表面参数的技术。但等离子照射后，氧气的重量百分比从25％降低至7％。X射线衍射图和快速傅立叶变换分析描绘了膜的多晶结构。我们提出了一种在不破坏化学修饰的情况下优化Cu-TiC膜的导电表面参数的技术。但等离子照射后，氧气的重量百分比从25％降低至7％。X射线衍射图和快速傅立叶变换分析描绘了薄膜的多晶结构。我们提出了一种在不破坏化学修饰的情况下优化Cu-TiC膜的导电表面参数的技术。