A Ka -band monolithic low-noise amplifier (LNA) with high gain and high dynamic range (DR) has been designed and implemented in a 100-nm gallium nitride (GaN)-on-Si technology. The LNA is designed as the first stage of a high DR receiver in an frequency modulated continuous wave (FMCW) radar for the detection of small drones. The three-stage monolithic microwave integrated circuit (MMIC) LNA has a linear gain of 26 dB and a noise figure (NF) of 2 dB in the frequency band 33–38 GHz. The output 1-dB compression point (P1dB) and output IP3 at 37 GHz are 20 and 28.4 dBm, respectively. To our knowledge, this combination of NF, gain, and DR performance represents the state of art in this frequency band.

中文翻译：

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一种 K aGaN-on-Si 100-nm技术的高带宽MMIC LNA，用于高动态范围雷达接收器

一种 K a 具有高增益和高动态范围（DR）的宽带单片低噪声放大器（LNA）已通过100 nm氮化硅（GaN）硅技术进行设计和实现。LNA被设计为调频连续波（FMCW）雷达中高DR接收器的第一级，用于检测小型无人机。三级单片微波集成电路（MMIC）LNA在33-38 GHz频带中具有26 dB的线性增益和2 dB的噪声系数（NF）。在37 GHz时，输出1 dB压缩点（P1dB）和输出IP3分别为20和28.4 dBm。据我们所知，NF，增益和DR性能的这种组合代表了该频段的最新技术。