In this study, Ag/TiO₂/n-InP/Au structure is formed by sputtering method and its reverse bias characterisation is made. n type InP semiconductor used in this study is 500 μm thick and has a carrier density of 3.13 × 10¹⁸ cm⁻³. Thickness of TiO₂ interface layer is adjusted as 60 Å. Some fundamental properties of the structure are investigated in a wide temperature range (120–360 K). Ln(I_r/E_r) vs E^0.5 plots are drawn by using reverse bias data. Barrier height and dielectric coefficient of TiO₂ interfacial layer are determined. The importance of this study is, it discusses whether TiO₂ can be used instead of SiO₂ as an interfacial layer in Shottky barrier diodes or not. Also this study proves that dominant current conduction mechanism in Ag/TiO₂/n-InP/Au structures can be explained with Frenkel-Poole emission or Schottky emission.

本研究采用溅射法形成Ag / TiO ₂ / n-InP / Au结构，并进行了反向偏压表征。本研究中使用的n型InP半导体的厚度为500μm，载流子密度为3.13×10 ¹⁸  cm ^-3。TiO ₂界面层的厚度调整为60。在较宽的温度范围（120–360 K）内研究了该结构的一些基本特性。通过使用反向偏置数据绘制Ln（I _r / E _r）与E ^0.5的关系图。确定了TiO ₂界面层的势垒高度和介电系数。这项研究的重要性在于，它讨论了TiO是否_是否可以在Shottky势垒二极管中使用₂代替SiO ₂作为界面层。这项研究还证明，可用Frenkel-Poole发射或Schottky发射可以解释Ag / TiO ₂ / n-InP / Au结构中的主导电流传导机理。