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High-gain and broadband SIW cavity-backed slots antenna for X-band applications
International Journal of Microwave and Wireless Technologies ( IF 1.4 ) Pub Date : 2021-02-11 , DOI: 10.1017/s1759078721000015
Dahbi El khamlichi , Naima Amar Touhami , Tajeddin Elhamadi , Mohammed Ali Ennasar

Substrate-integrated waveguide (SIW) technology has recently drawn attention to its benefits in the microwave field, such as integration in planar microwave circuits, low manufacturing cost, and high-quality factor compared to other technologies. In this paper, a broadband and high gain SIW cavity-backed L-shaped slot antenna structure has been designed and made for X-band applications. Three pairs of L-shaped half-wave resonators are placed on the lower wall of the cavity (backed-slots) to further expand bandwidth and improve gain. The final antenna designed operates on a band ranging from 9.4 to 10.5 GHz with a bandwidth of 11%. Moreover, the gain reaches a value of 9.5 dBi. The final antenna is realized on a Rogers RT/Duroid 5870 substrate. The gain, the reflection coefficient, and the radiation patterns are measured and compared to the EM simulation results and a very good agreement is obtained. The proposed cavity-backed L-shaped slot antenna gives a good compromise between a high gain and a large bandwidth.

中文翻译:

用于 X 波段应用的高增益和宽带 SIW 背腔缝隙天线

与其他技术相比,衬底集成波导 (SIW) 技术最近引起了人们对其在微波领域中的优势的关注,例如在平面微波电路中的集成、低制造成本和高质量因数。在本文中,针对 X 波段应用设计并制造了一种宽带和高增益 SIW 背腔 L 形缝隙天线结构。三对L形半波谐振器放置在腔体的下壁(背槽)上,以进一步扩大带宽并提高增益。最终设计的天线工作在 9.4 至 10.5 GHz 的频带上,带宽为 11%。此外,增益达到 9.5 dBi 的值。最终天线是在 Rogers RT/Duroid 5870 基板上实现的。增益、反射系数、测量辐射方向图并与电磁仿真结果进行比较,获得了非常好的一致性。所提出的背腔 L 形缝隙天线在高增益和大带宽之间提供了良好的折衷。
更新日期:2021-02-11
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