In the present work, tailoring the photoluminescent and electrical properties of Zn_1-xSn_xS@PVP polymeric composite films has been achieved for LEDs applications. Un-doped and 1.0 wt % of Sn-doped ZnS in polyvinyl pyrrolidine (Zn_1-xSn_xS@PVP) polymeric composite films were prepared using solution casting technique. The effect of Sn molar ratio x (x: 0 to 0.3) on the morphological, structural, photoluminescent and electrical properties is explored using a scanning electron microscope, X-ray diffraction (XRD), photoluminescence (PL) and DC electrical conductivity studies. XRD measurements reveal the amorphous nature of both bare PVP and Zn_1-xSn_xS@PVP polymeric composite films. The PL spectra measurements of the prepared films exhibit broad emission peaks with maxima intensities ranged from 400 to 417 nm. The Gaussian fitting method is used to de-convolute the PL emission bands of bare PVP and Zn_1-xSn_xS@PVP polymeric composite films. Three emission peaks for ZnS@PVP polymeric film are noticed at 392, 430 and 476 nm. An extra emission peak located at the green light region (480–502 nm) is observed for Zn_1-xSn_xS@PVP composite films. The electrical conductivity of the prepared Zn_1-xSn_xS@PVP polymeric composite films is enhanced thirty times more than that of bare PVP one. The prepared Zn_1-xSn_xS@PVP polymeric composite films could play an important role in LEDs applications.

在当前的工作中，已经实现了针对LED应用定制Zn _1-x Sn _x S @ PVP聚合物复合膜的光致发光和电学特性。使用溶液流延技术制备了聚乙烯吡咯烷酮（Zn _1-x Sn _x S @ PVP）聚合物复合膜中未掺杂的和1.0 wt％的Sn掺杂的ZnS 。使用扫描电子显微镜，X射线衍射（XRD），光致发光（PL）和直流电导率研究，探讨了Sn摩尔比x（x：0至0.3）对形态，结构，光致发光和电性能的影响。XRD测量揭示了裸露的PVP和Zn _1-x Sn _x的非晶态性质S @ PVP聚合物复合膜。制备的膜的PL光谱测量结果显示出宽的发射峰，其最大强度为400至417nm。高斯拟合法用于对裸露的PVP和Zn _1-x Sn _x S @ PVP聚合物复合膜的PL发射带进行反卷积。在392、430和476 nm处发现ZnS @ PVP聚合物膜的三个发射峰。对于Zn _1-x Sn _x S @ PVP复合膜，在绿光区域（480-502 nm）处观察到一个额外的发射峰。所制备的Zn _1-x Sn _x S @ PVP聚合物复合膜的电导率比裸PVP膜高30倍。制备的Zn _1-x Sn_X š@ PVP高分子复合膜可以发挥LED的应用中具有重要作用。