The function of a commercial Schottky Barrier Diode (SBD) based on 4H-SiC in an environment of extreme temperature and radiation was assessed. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the devices were measured by heavy ions (HIs) irradiation at 3 different fluences and 15 different nodes of temperature. From these measurements, the effective carrier concentration (N_D), reverse current (I_R), series resistance (R_S), ideal factor (n), and Schottky barrier height (SBH) were calculated and analyzed. Obvious increases of N_D and I_R were found and some changes of the electronic characteristics with temperature were enhanced by HIs. After the highest fluence of irradiation, the I_R at low temperature (20 K) was even larger than the I_R at room temperature, which was subjected to lower fluence of irradiation, suggesting risks for aerospace applications. These changes were attributed to defects both at the interface and in the body-substrate induced by irradiation.

评估了基于4H-SiC的商业肖特基势垒二极管（SBD）在极端温度和辐射环境下的功能。通过在3种不同的通量和15个不同的温度节点上通过重离子（HIs）照射来测量器件的电容-电压（CV）和电流-电压（IV）特性。通过这些测量，计算和分析了有效载流子浓度（N _D），反向电流（I _R），串联电阻（R _S），理想因子（n）和肖特基势垒高度（SBH）。HIs发现N _D和I _R明显增加，并且电子特性随温度的变化有所增强。经过最高的辐照量后，I_ř在低温（20 K）比我更大_{- [R}在室温下，将其进行降低照射的能量密度，这表明用于航空航天应用的风险。这些变化归因于辐照引起的界面和身体基质中的缺陷。