In this work, the thermal behavior of GaN HEMTs is studied with a three-fold contribution: (i) test structures for resistive thermometry are introduced and manufactured; (ii) subsequently, those are used to perform the on-wafer thermal characterization of small and power HEMTs on SOI, and poly-AlN (QST®) with the aim of comparing the thermal resistance with respect to the reference Si counterpart; (iii) finally, 3D thermal FEM models validated with the experimental results obtained in the previous step are used to perform transient thermal simulations to analyze the effects of substrate thinning, thereby providing as output the thermal impedance (also as equivalent network) and the Safe Operating Area.

在这项工作中，对GaN HEMT的热行为进行了三方面的研究：（i）引入并制造了用于电阻测温的测试结构；（ii）随后，将它们用于在SOI和poly-AlN（QST®）上对小型HEMT和功率HEMT进行晶片上热特性分析，目的是比较相对于参考Si对应物的热阻；（iii）最后，通过上一步获得的实验结果验证的3D热FEM模型用于执行瞬态热仿真，以分析衬底变薄的影响，从而提供热阻抗（也作为等效网络）和安全输出操作区域。