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Design and fabrication of high power InGaN blue laser diode over 8 W
Optics & Laser Technology ( IF 5 ) Pub Date : 2021-02-10 , DOI: 10.1016/j.optlastec.2021.106985
Zhibai Zhong , Shiqiang Lu , Jinchai Li , Wei Lin , Kai Huang , Shuping Li , Duanjun Cai , Junyong Kang

The impact of multi quantum wells (MQWs) structure on the homogeneity of spontaneous luminescence and quantum efficiency of the high power InGaN blue laser diode (LD) is numerically investigated. The structure with 2QWs in the active region is found to be the optimal choice for the high power InGaN LD. Accordingly, the edge emitting LD structure is grown and fabricated. To study the facet coating effect on the catastrophic optical damage (COD) level, three types of LDs are coated with different materials by different techniques, respectively. The characterization results confirm that the single blue LD coated with the Al2O3 and Al2O3/Ta2O5 films by electron cyclotron resonance deposition exhibits the highest COD level, due to the better crystal quality and interfacial quality of the coated films. The LD starts to operate at 1.04 kA/cm2 with slope efficiency of 1.8 W/A and the wavelength of 444.9 nm. As a result, the output power as high as 8.04 W is achieved at 5.5 A.



中文翻译:

8 W以上高功率InGaN蓝色激光二极管的设计与制造

数值研究了多量子阱(MQWs)结构对高功率InGaN蓝色激光二极管(LD)自发发光的均匀性和量子效率的影响。发现有源区具有2QW的结构是高功率InGaN LD的最佳选择。因此,生长并制造了边缘发射LD结构。为了研究刻面涂层对灾难性光学损伤(COD)的影响,分别通过不同的技术用不同的材料涂覆了三种类型的LD。表征结果证实,涂有Al 2 O 3和Al 2 O 3 / Ta 2 O 5的单一蓝色LD由于涂覆膜的更好的晶体质量和界面质量,通过电子回旋共振沉积法制备的膜呈现最高的COD水平。LD以1.04 kA / cm 2的频率开始工作,斜率效率为1.8 W / A,波长为444.9 nm。结果,在5.5 A时可实现高达8.04 W的输出功率。

更新日期:2021-02-10
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