We report on laser site-selective spectroscopy, as well as high resolution, infrared to optical absorption, of both the six and seven -fold coordinated, C₁ symmetry sites for Nd³⁺ doped Y₂SiO₅. A total of fifty three crystal-field energy levels have been determined for both sites. We also present the temperature dependencies of the spectral linewidth and line position as measured in absorption. The coupling coefficients due to Raman two-phonon and direct one-phonon processes are interpreted in terms of the phonon energies contributing and their roles in the phonon energy distribution of Y₂SiO₅. Finally, we analyse direct non-radiative relaxation processes as inferred from the temperature-dependent fluorescence lifetimes.

我们报道了Nd ³⁺掺杂Y ₂ SiO ₅的六倍和七倍配位的C ₁对称位点的激光位点选择性光谱以及高分辨率，红外到光吸收。对于这两个位置，总共确定了五十三个晶体场能级。我们还介绍了在吸收中测得的光谱线宽和线位置的温度依赖性。根据声子能量的贡献及其在Y ₂ SiO ₅的声子能量分布中的作用来解释拉曼二声子和直接一声子过程的耦合系数。最后，我们分析了由温度依赖性荧光寿命推断出的直接非辐射弛豫过程。