Characterization and identification of recombination active defects in photovoltaic (PV) materials are essential for improving the performance of solar cells, hence, reducing their levelized cost of electricity. Injection dependent lifetime spectroscopy (IDLS) is a sensitive and widely used technique for investigating defects in silicon. With the development of carrier lifetime measurement techniques and analysis methods, IDLS has gained increasing popularity within the PV research community. In this paper, we review IDLS, from measurement techniques and systems, to existing and emerging defect parameterization methods. We also discuss the limitations and potential pitfalls of lifetime spectroscopy analysis and outline the possible approaches for improvement.

光伏（PV）材料中复合活性缺陷的表征和识别对于提高太阳能电池的性能至关重要，因此可以降低其平均电费。注入依赖寿命光谱（IDLS）是一种敏感且广泛使用的技术，用于研究硅中的缺陷。随着载流子寿命测量技术和分析方法的发展，IDLS在光伏研究界越来越受欢迎。在本文中，我们回顾了IDLS，从测量技术和系统到现有和新兴的缺陷参数化方法。我们还将讨论寿命光谱分析的局限性和潜在的陷阱，并概述可能的改进方法。