Photoluminescence (PL) test was conducted to investigate the effect of rapid thermal annealing (RTA) on the optical performance of self-assembled InAs/GaAs quantum dots (QDs) at the temperatures of 16 and 300 K. It was found that after RTA treatment, the PL spectrum of the QDs sample had a large blue-shift and significantly broadened at 300 K. Compared with the as-grown InAs QDs sample, the PL spectral width has increased by 44.68 meV in the InAs QDs sample RTA-treated at 800 °C. The excitation power-dependent PL measurements showed that the broadening of the PL peaks of the RTA-treated InAs QDs should be related to the emission of the ground state (GS) of different-sized InAs QDs, the InAs wetting layer (WL) and the In0.15Ga0.85As strain reduction layer (SRL) in the epitaxial InAs/GaAs layers.

中文翻译：

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InAs/GaAs量子点快速热退火增宽光谱的光致发光研究

进行光致发光 (PL) 测试以研究快速热退火 (RTA) 在 16 和 300 K 温度下对自组装 InAs/GaAs 量子点 (QD) 光学性能的影响。发现经过 RTA 处理，QDs 样品的 PL 光谱有很大的蓝移，并在 300 K 处显着展宽。 与生长的 InAs QDs 样品相比，在 800 下 RTA 处理的 InAs QDs 样品的 PL 光谱宽度增加了 44.68 meV ℃。激发功率相关的 PL 测量表明，RTA 处理的 InAs QD 的 PL 峰的展宽应该与不同尺寸 InAs QD 的基态 (GS)、InAs 润湿层 (WL) 和外延 InAs/GaAs 层中的 In0.15Ga0.85As 应变降低层 (SRL)。