We report a theoretical study of a broadband Si/graded-SiGe/Ge/Ge_0.9Sn_0.1 p–i–n photodetector with a flat response based on modulating thickness of the layers in the active region. The responsivity of the photodetector is about 0.57 A/W in the range of 700 to 1800 nm. This structure is suitable for silicon-based epitaxial growth. Annealing is technically applied to form the graded-SiGe. The photodetector reaches a cut-off wavelength at ~2300 nm and a low dark-current density under 3 V reverse bias about 0.17 mA/cm² is achieved theoretical at room temperature. This work is of great significance for silicon-based detection and communication, from visible to infrared.

我们报告了宽带 Si/渐变 SiGe/Ge/Ge _0.9 Sn _0.1 p-i-n 光电探测器的理论研究，该探测器具有基于有源区中层的调制厚度的平坦响应。光电探测器的响应度在 700 到 1800 nm 范围内约为 0.57 A/W。这种结构适用于硅基外延生长。在技​​术上应用退火来形成分级SiGe。光电探测器在约 2300 nm 处达到截止波长，并且在 3 V 反向偏压下，在室温下理论上实现了约 0.17 mA/cm ^{2的低暗电流密度。}这项工作对于从可见光到红外的硅基检测和通信具有重要意义。