AlGaN/GaN high-electron-mobility transistors (HEMTs) with postpassivation plasma treatment are demonstrated and investigated for the first time. The results show that postpassivation plasma treatment can reduce the gate leakage and enhance the drain current. Comparing with the conventional devices, the gate leakage of AlGaN/GaN HEMTs with postpassivation plasma decreases greatly while the drain current increases. Capacitance–voltage measurement and frequency-dependent conductance method are used to study the surface and interface traps. The mechanism analysis indicates that the surface traps in the access region can be reduced by postpassivation plasma treatment and thus suppress the effect of virtual gate, which can explain the improvement of DC characteristics of devices. Moreover, the density and time constant of interface traps under the gate are extracted and analyzed.

首次展示和研究了采用后钝化等离子体处理的 AlGaN/GaN 高电子迁移率晶体管 (HEMT)。结果表明，后钝化等离子体处理可以减少栅极泄漏并提高漏极电流。与传统器件相比，具有后钝化等离子体的 AlGaN/GaN HEMT 的栅极泄漏大大降低，而漏极电流增加。电容电压测量和频率相关的电导方法用于研究表面和界面陷阱。机理分析表明，后钝化等离子体处理可以减少存取区的表面陷阱，从而抑制虚拟栅极的影响，这可以解释器件直流特性的改善。而且，