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Forming-free resistive switching in ferroelectric Bi 0.97 Y 0.03 Fe 0.95 Sc 0.05 O 3 film for RRAM application
Physica Scripta ( IF 2.9 ) Pub Date : 2021-02-09 , DOI: 10.1088/1402-4896/abe149
A K Jena 1, 2, 3 , Himadri Nandan Mohanty 1 , J Mohanty 1
Affiliation  

Electromechanical and resistive switching properties were investigated in ferroelectric rhombohedral Bi 0.97 Y 0.03 Fe 0.95 Sc 0.05 O 3 (BYFSO) film, grown on fluorine-doped tin oxide coated glass substrate. Piezoforce microscopy images of the BYFSO film after the electrical writing indicates the ferroelectric domains were switched completely towards the upward and downward direction at 8 V DC bias voltage, which is analogous to the ferroelectric hysteresis curve. The resistive switching effect was investigated on the Ag/BYFSO/FTO RRAM device configuration through conventional IV characteristics. The charge transport process in Ag/BYFSO/FTO resistive device is transformed from Ohmic to space charge limited current conduction mechanism. The endurance characteristics ensure a stable bipolar resistive switching effect with a large memory window of OFF/ON ratio about ∼100 for 50 repeatable testing cycles. From the impedance spectroscopy analysis, it is observed that the bulk resistance plays a significant role during the SET-RESET process, by large degradation of resistance from megaohm (high resistance state) to kiloohm (low resistance state). The oxygen vacancy induced conductive filaments are responsible for achieving the various resistive states in the device.



中文翻译:

用于RRAM应用的铁电Bi 0.97 Y 0.03 Fe 0.95 Sc 0.05 O 3膜中的无形电阻切换

研究了在掺氟氧化锡涂层玻璃基板上生长的铁电菱形Bi 0.97 Y 0.03 Fe 0.95 Sc 0.05 O 3(BYFSO)膜的机电和电阻切换特性。电写入后BYFSO膜的压电显微镜图像表明,铁电畴在8 V DC偏置电压下完全朝着上下方向切换,这类似于铁电磁滞曲线。通过常规的I - V研究了Ag / BYFSO / FTO RRAM器件配置上的电阻开关效应特征。Ag / BYFSO / FTO电阻器件中的电荷传输过程已从Ohmic转变为空间电荷限制电流传导机制。耐久特性确保了稳定的双极电阻切换效果,并且在50个可重复测试循环中,OFF / ON 比率的大存储窗口约为100左右。从阻抗谱分析可以看出,体电阻在SET-RESET过程中起重要作用,因为电阻从兆欧(高电阻状态)到千欧(低电阻状态)的衰减很大。氧空位诱导的导电丝负责在装置中实现各种电阻状态。

更新日期:2021-02-09
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