SiOC membranes were fabricated by a sol-gel method using three types of silica precursors: vinyltrimethoxysilane (VTMS), triethoxysilane (TRIES), and 1,1,3,3-tetramethyldisiloxane (TMDSO). The timing of the addition of TMDSO was evaluated via single-gas permeation for its effect on formation of the SiOC structure and on membrane performance. The effect that VTMS compounding exerted on membrane performance and on oxidation stability was also evaluated. The network size of SiOC membranes was precisely tailored by controlling the timing of the addition of TMDSO during the sol preparation process. There was no significant change in the network pore size either before or after thermally induced hydrosilylation (Si–C=C + Si–H → Si–CH₂–CH₂–Si) and the cross-linking of Si–CH₃ groups (Si–CH₃ + Si–CH₃ → Si–CH₂–Si + CH₄). These SiOC membranes were highly selective of H₂ over larger molecules such as CF₄ and SF₆. The effect of VTMS compounding on network pore size was small, but the oxidation stability of the SiOC structure at 500 °C was dramatically enhanced.

使用三种类型的二氧化硅前体通过溶胶-凝胶法制备SiOC膜：乙烯基三甲氧基硅烷（VTMS），三乙氧基硅烷（TRIES）和1,1,3,3-四甲基二硅氧烷（TMDSO）。通过单气体渗透来评估添加TMDSO的时间对其对SiOC结构的形成和膜性能的影响。还评估了VTMS复合对膜性能和氧化稳定性的影响。通过控制溶胶制备过程中添加TMDSO的时间，可以精确地调整SiOC膜的网络尺寸。在热诱导氢化硅烷化之前或之后，网络孔径没有明显变化（Si –C = C +  Si –H→ Si –CH ₂ –CH₂ –Si）和Si –CH ₃基团的交联（Si –CH ₃  +  Si –CH ₃ → Si –CH ₂ –Si + CH ₄）。这些SiOC膜对H _2的选择性比对大分子（例如CF ₄和SF _6）高。VTMS配混对网络孔径的影响很小，但在500°C时SiOC结构的氧化稳定性得到了显着增强。