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Common-Mode EMI Mathematical Modeling Based on Inductive Coupling Theory in a Power Module With Parallel-Connected SiC MOSFETs
IEEE Transactions on Power Electronics ( IF 6.7 ) Pub Date : 2020-12-22 , DOI: 10.1109/tpel.2020.3046658
Xiliang Chen , Wenjie Chen , Xu Yang , Yu Ren , Liang Qiao

Parallelization of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) could significantly improve the current capability and power rating of power converters. However, the inductive coupling effect of parasitic inductance between the paralleled branches is a critical challenge for the mathematical modeling of electromagnetic interference (EMI) in a power module with parallel-connected SiC MOSFETs (PMPSM). In this article, first, an EMI source generation mathematical modeling method for PMPSM is proposed. The quantitative analysis of EMI interference source caused by inductive coupling of PMPSM is introduced. Second, a common mode (CM) interference propagation mathematical modeling method for PMPSM is proposed. Through the equivalent CM interference source and equivalent impedance model, the strong and weak inductive coupling theory of CM interference equivalent circuit based on parallel-connected SiC MOSFETs is proposed. Third the effect of different decoupling capacitance values on EMI source is compared and analyzed and the influence of changing the ratio of coupling inductance inside and outside the decoupling branch on EMI source of parallel-connected switches is analyzed. Finally, a self-made 1.2-kV 160-A PMPSM based on EMI optimized layout is proposed and tested via an experimental platform of synchronous buck converter, which can verify the feasibility and validity of the proposed power module and the theoretical analysis.

中文翻译:

基于电感耦合理论的并联SiC MOSFET功率模块中的共模EMI数学建模

碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)的并联可以显着提高功率转换器的电流容量和额定功率。但是,对于并联连接的SiC MOSFET(PMPSM)的功率模块中的电磁干扰(EMI)的数学建模,并联支路之间的寄生电感的电感耦合效应是一个关键挑战。本文首先提出了一种用于PMPSM的EMI源产生数学建模方法。介绍了由PMPSM电感耦合引起的EMI干扰源的定量分析。其次,提出了一种用于PMPSM的共模(CM)干扰传播数学建模方法。通过等效CM干扰源和等效阻抗模型,提出了基于并联SiC MOSFET的共模干扰等效电路的强弱电感耦合理论。第三,比较和分析了不同去耦电容值对EMI源的影响,并分析了改变去耦支路内外耦合电感比对并联开关的EMI源的影响。最后,提出了一种基于EMI优化布局的自制1.2 kV 160-A PMPSM,并通过同步降压转换器的实验平台进行了测试,可以验证所提出的电源模块的可行性和有效性以及理论分析。第三,比较和分析了不同去耦电容值对EMI源的影响,并分析了改变去耦支路内外耦合电感比对并联开关的EMI源的影响。最后,提出了一种基于EMI优化布局的自制1.2 kV 160-A PMPSM,并通过同步降压转换器的实验平台进行了测试,可以验证所提出的电源模块的可行性和有效性以及理论分析。第三,比较和分析了不同去耦电容值对EMI源的影响,并分析了改变去耦支路内外耦合电感比对并联开关的EMI源的影响。最后,提出了一种基于EMI优化布局的自制1.2 kV 160-A PMPSM,并通过同步降压转换器的实验平台进行了测试,可以验证所提出的电源模块的可行性和有效性以及理论分析。
更新日期:2021-02-05
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