The broken inversion symmetry and time-reversal symmetry along with the large spin–orbit interactions in monolayer MoS₂ make it an ideal candidate for novel valleytronic applications. However, the realization of efficient spin-valley-controlled devices demands the integration of perpendicular magnetic anisotropy (PMA) electrodes with negligible Schottky barriers. Here, as the first demonstration, we fabricated a monolayer MoS₂ field-effect transistor with PMA electrodes: Pt/[Co/Pt]₃ and [Co/Pt]₂. The I–V curves of PMA/MoS₂ contacts show symmetric and linear behavior reflecting Ohmic nature. The flat-band Schottky barrier heights (SBHs) extracted using the temperature and gate voltage dependence of the I–V curves were found to be 10.2 and 9.6 meV. The observed SBHs are record low values reported thus far for any metal/monolayer MoS₂ contact. High-quality PMA electrodes with almost zero SBH play a paramount role in the future development of novel spintronic/valleytronic devices; hence, our results can open a new route toward the realization of novel technological devices employing two-dimensional materials.

破碎的反转对称性和时间反转对称性以及单层MoS _2中的大自旋轨道相互作用使它成为新型山谷电子应用的理想候选者。然而，要实现有效的自旋谷控制器件，就需要将垂直磁各向异性（PMA）电极与肖特基势垒忽略不计。在这里，作为第一个演示，我们制造了带有PMA电极Pt / [Co / Pt] ₃和[Co / Pt] ₂的单层MoS ₂场效应晶体管。PMA / MoS ₂的I – V曲线触点显示出反映欧姆特性的对称和线性行为。利用I – V曲线的温度和栅极电压依赖性提取的平带肖特基势垒高度（SBHs）为10.2和9.6 meV。迄今为止，对于任何金属/单层MoS ₂接触，观察到的SBH均是记录的低值。SBH几乎为零的高质量PMA电极在新型自旋电子/电压电子器件的未来发展中起着至关重要的作用。因此，我们的结果可以为实现采用二维材料的新型技术设备开辟一条新途径。