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Vacuum processed large area doped thin-film crystals: A new approach for high-performance organic electronics
Materials Today Physics ( IF 11.5 ) Pub Date : 2021-02-05 , DOI: 10.1016/j.mtphys.2021.100352
S.-J. Wang , M. Sawatzki , H. Kleemann , I. Lashkov , D. Wolf , A. Lubk , F. Talnack , S. Mannsfeld , Y. Krupskaya , B. Büchner , K. Leo

Rubrene single crystal domains with hundreds of micrometers size fully covering different substrates are achieved by thermal annealing of evaporated amorphous thin films with the help of a thin glassy underlayer. The sufficiently large energy level offset of the underlayer material and rubrene enables high performance staggered bottom gate rubrene crystalline transistors with maximum field-effect linear mobility over 5 cm2V−1s−1 (μAvg = 4.35 ± 0.76 cm2V−1s−1) for short channel devices of 20 μm, comparable to high quality rubrene bulk single crystals. Moreover, since molecular dopants up to several mole percent can be incorporated into the single crystals with a minimal disturbance of the lattice, the contact resistance of the transistors is significantly reduced to around 1 kOhm.cm by contact doping via adlayer epitaxy of p-type doped rubrene. Our results pave the way for novel high-performance organic electronics using crystalline active materials with mass-production compatible deposition techniques.



中文翻译:

真空处理的大面积掺杂薄膜晶体:高性能有机电子的新方法

通过在薄玻璃底层的帮助下对蒸发的非晶态薄膜进行热退火,可以完全覆盖不同的衬底,形成数百微米大小的Rubrene单晶畴。足够大的能量水平的下层材料和红荧烯的偏移使得高性能交错线性迁移最大场效应底栅红荧烯结晶晶体管在5cm 2 V -1小号-1μ平均 = 4.35±0.76厘米2 V -1 s -1)适用于20μm的短通道器件,可与高质量的红荧烯块状单晶媲美。此外,由于可以在晶格扰动最小的情况下将高达几个摩尔百分数的分子掺杂剂掺入到单晶中,通过通过p型外延外延进行接触掺杂,晶体管的接触电阻显着降低至约1kOhm.cm。掺杂红荧烯。我们的研究结果为使用结晶活性材料和大规模生产兼容沉积技术的新型高性能有机电子产品铺平了道路。

更新日期:2021-02-12
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