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Enhanced performance through trap states passivation in quantum dot light emitting diode
Journal of Luminescence ( IF 3.6 ) Pub Date : 2021-02-04 , DOI: 10.1016/j.jlumin.2021.117946
Mingrui Zhang , Feng Guo , Qingzhong Zhou , Tian Zhong , Biao Xiao , Liyong Zou , Qingliang You , Baogui You , Yang Li , Xueqing Liu , Hongjiao Liu , Jun Yan , Jiyan Liu

Device performance enhancement in quantum dot light-emitting diodes (QLEDs) is realized by adding a small amount of insulating polymer polymethyl methacrylate (PMMA) into the emitting quantum dot layer. Pool-Frenkel effect is observed through temperature-dependent current density-voltage experiments, indicating the important role of trap states, and the addition of the insulating PMMA helps to reduce the Poole-Frenkel barrier hence the trap depth. Reduced density and depth of trap states with PMMA are indeed observed through further capacitance measurements. This work contributes to a better understanding on the effects of traps in QLEDs.



中文翻译:

通过量子点发光二极管中的陷阱态钝化提高性能

通过在发光量子点层中添加少量绝缘聚合物聚甲基丙烯酸甲酯(PMMA),可以提高量子点发光二极管(QLED)的器件性能。通过与温度相关的电流密度-电压实验观察到Pool-Frenkel效应,表明陷阱能级的重要作用,绝缘PMMA的添加有助于减小Poole-Frenkel势垒,从而减小陷阱的深度。实际上,通过进一步的电容测量,可以观察到PMMA陷阱态的密度和深度降低。这项工作有助于更好地了解QLED中陷阱的影响。

更新日期:2021-02-09
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