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Computing grounding resistance and impulse impedance of horizontal electrodes parallel or perpendicular to the interface of a vertically stratified soil using transmission line theory
Electric Power Systems Research ( IF 3.9 ) Pub Date : 2021-02-04 , DOI: 10.1016/j.epsr.2021.107060
Raphael Batista , José Osvaldo Saldanha Paulino

This work shows a procedure to compute the resistance and harmonic impedance of horizontal grounding electrodes buried in a vertically stratified soil. Such electrodes can be parallel or perpendicular to the interface of the vertically stratified soil. An additional resistive element is developed for such condition of soil. A procedure based on transmission line (TL) theory is applied using the developed expressions for grounding harmonic impedance, including different dielectric permittivities for each soil layer. Solutions obtained for slow and fast transients, similar to that from lightning currents, are compared to a rigorous electromagnetic (EM) model. The cases evaluated show a good agreement compared to EM technique, which supports the suitability of the developed procedure, when the procedure premises are a good approximation for the problem. Furthermore, the results for TL procedure agree with the overestimation commonly reported by literature and, for this peculiar soil model, indicate the conditions that are capable to modify significantly the whole behavior of the grounding, i.e., the values of grounding resistance and impulse impedance, for a condition where the interface is parallel or perpendicular to the conductors. The conclusions are supported by the analysis of practical and similar real-world conditions.



中文翻译:

利用传输线理论计算平行或垂直于垂直分层土壤界面的水平电极的接地电阻和脉冲阻抗

这项工作展示了一种计算埋在垂直分层土壤中的水平接地电极的电阻和谐波阻抗的过程。这样的电极可以平行于或垂直于垂直分层的土壤的界面。针对这种土壤条件开发了一种附加的电阻元件。使用基于传输线(TL)理论的程序,使用开发的接地谐波阻抗表达式,包括每个土壤层的不同介电常数。将类似于雷电流的慢速和快速瞬变获得的解决方案与严格的电磁(EM)模型进行比较。与EM技术相比,所评估的案例显示出良好的一致性,这支持了所开发程序的适用性,程序前提是该问题的一个很好的近似值。此外,TL过程的结果与文献普遍报道的高估相符,并且对于这种特殊的土壤模型,指出了能够显着改变整个接地特性的条件,即接地电阻和脉冲阻抗的值,适用于界面平行或垂直于导体的情况。结论是对实际和类似现实情况的分析所支持的。适用于界面平行或垂直于导体的情况。结论是对实际和类似现实情况的分析所支持的。适用于界面平行或垂直于导体的情况。结论是对实际和类似现实情况的分析所支持的。

更新日期:2021-02-04
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