The present study aimed to evaluate the optical properties of 1D photonic crystal (PC) with a defect layer doped by four-level InGaN/GaN quantum dots. Transient and steady-state behavior of the medium completely relies on the intensities and relative phases of coherent coupling fields. In addition, the transient absorption–dispersion spectra of 1DPC can be easily adjusted by choosing the controllable parameters properly. Furthermore, the transmitted and reflected light pulses at (long wavelength) can be tuned by controlling the Rabi frequencies of applied light due to their potential applications in all-optical systems. Furthermore, the effect of relative phase between applied fields on the light propagation was evaluated through the medium. In addition, all-optical switching time was found for subluminal/superluminal and absorption/transmission of light propagation. The required switching time ranges between 2–7 ps. The proposed model may provide some new possibilities for technological applications in optoelectronics and solid-state quantum information science and systems due to large applications in signal processing.

本研究旨在评估缺陷层由四能级InGaN / GaN量子点掺杂的一维光子晶体（PC）的光学性能。介质的瞬态和稳态行为完全取决于相干耦合场的强度和相对相位。此外，1DPC的瞬态吸收色散光谱可以容易地通过适当选择该可控参数的调整。此外，透射和反射的光脉冲在由于其在全光学系统中的潜在应用，可以通过控制所施加的光的拉比频率来调谐长波长（长波长）。此外，通过介质评估了施加场之间的相对相位对光传播的影响。另外，发现了腔内/超腔和光传播的吸收/传输的全光切换时间。所需的切换时间范围为2–7 ps。由于信号处理中的大量应用，所提出的模型可能为光电技术和固态量子信息科学与系统中的技术应用提供一些新的可能性。