Abstract

The results of investigations of silicon–ultrathin oxide (42 Å)–polysilicon structures resistant to field damages are presented. It is found that the total charge exchange of localized electronic states and minority charge carriers concentrated at the substrate–insulator interface, which occurs with a change in the field voltage, is close to the same characteristic of structures with an oxide thickness of 37 Å. The current flowing through SiO₂ increases with voltage much stronger in the enrichment state of the semiconductor than in its depletion state. Moreover, the asymmetry of the I–V characteristics with respect to the polarity of the voltage drop across the insulator in SiO₂ samples with a thickness of 42 Å is more pronounced than in structures with an oxide of 37 Å. An explanation for this asymmetry is possible, if the potential relief in the insulator has a peak, which is significantly shifted to the oxide–polysilicon interface, and the potential on the branch on the semiconductor side significantly decreases towards the contact with the substrate.

中文翻译：

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氧化硅超薄（4.2 nm）–耐现场损伤的多晶硅结构

摘要

给出了抗现场损伤的硅-超氧化铀（42Å）-多晶硅结构的研究结果。研究发现，随着电场电压的变化，局部电子态和少数电荷载流子集中在衬底-绝缘体界面处的总电荷交换接近于具有37Å氧化物厚度的结构的相同特征。在半导体的富集状态中，流过SiO ₂的电流随着电压的增加而比在其耗尽状态中强得多。此外，的不对称我- V特性相对于以SiO跨过绝缘体的电压降的极性₂厚度为42的样品比氧化物为37的结构更明显。如果绝缘体中的电势释放具有一个明显移至氧化物-多晶硅界面的峰，并且半导体侧分支上的电势朝着与基板的接触而显着下降，则可以解释这种不对称性。