Abstract

Effect of an isolated Ge nanowire embedded in an n-doped Si on electron beam induced current is simulated by a Monte Carlo calculation algorithm. A circular nano-contact is used to collect the current generated by the use of primary energy of 5 or 10 keV in a perpendicular configuration along a line passing through the contact center. The nanowire, considered as a recombination center, is vertically positioned beneath the contact. Calculation takes into account various parameters such as a nano-scale depletion zone under the nano-contact, the depth of the nanowire, and its size. The surface recombination velocity is taken equal to zero. Competition between both carriers collected by the nano-contact and those captured by the nanowire is studied. Both processes are affected by the depth of the nanowire and by the primary energy. Moreover, the nanowire–Si contact behaves as a nano-scale hetero-junction, and hole storage in the nanowire leads to accentuation of energy band bending, especially in the longitudinal direction of the nanowire. Consequently, tunnel recombination would be present.

中文翻译：

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嵌入式纳米线中载流子捕获的仿真及其对纳米EBIC技术的影响

摘要

通过蒙特卡洛计算算法模拟了嵌入n掺杂硅中的隔离Ge纳米线对电子束感应电流的影响。圆形纳米触点用于沿通过触点中心的线以垂直配置收集通过使用5或10 keV的一次能量产生的电流。纳米线被视为重组中心，垂直放置在触点下方。计算考虑了各种参数，例如纳米接触下的纳米级耗尽区，纳米线的深度及其尺寸。表面复合速度取为零。研究了通过纳米接触收集的两种载体与通过纳米线捕获的两种载体之间的竞争。这两个过程都受到纳米线深度和一次能量的影响。此外，纳米线-Si接触表现为纳米级异质结，纳米线中的空穴存储会导致能带弯曲的加剧，尤其是在纳米线的纵向。因此，将出现隧道重组。