Abstract

The performance and scalability of silicon nanowire field-effect transistor (SiNWFET) and carbon nanotube field-effect transistor (CNTFET) with surround gate geometry were studied using such tools as material exploration and design analysis (MedeA) and device modeling and simulation SilvacoTCAD. The SiNWFET and CNTFET with gate-all-around (GAA) structure offer good gate electrostatic control, high On-current and better suppression of short-channel effects with complete encirclement of the device channel. Rather than using the bulk properties of silicon, estimation of properties silicon nanowire (SiNW) was made using MedeA VASP tool based on density functional theory (DFT). In this study, the device input (I_D–V_GS) and output (I_D–V_DS) have been analyzed and parameters like threshold voltage, I_On/I_Off ratio, drain induced barrier lowering and sub-threshold slope extracted, and comparison is made between SiNWFET and CNTFET devices. The results point towards the DFT-based material parameter estimation to incorporate the quantum effects and use of SiNW/CNT-based GAA structure below 10 nm to meet scaling targets. The results suggest that the SiNWFET and CNTFET device with GAA geometry could be a better alternative to conventional MOSFETs and FinFET for numerous high-performance and low-power device applications.

中文翻译：

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使用DFT提取硅纳米线参数以及SiNWFET和CNTFET器件的比较性能分析

摘要

使用诸如材料探索和设计分析（MedeA）以及器件建模和仿真SilvacoTCAD等工具研究了具有环绕栅几何形状的硅纳米线场效应晶体管（SiNWFET）和碳纳米管场效应晶体管（CNTFET）的性能和可扩展性。具有环绕栅极（GAA）结构的SiNWFET和CNTFET具有良好的栅极静电控制，高导通电流，并且在完全环绕器件沟道的情况下，可以更好地抑制短沟道效应。不是使用硅的整体性质，而是使用基于密度泛函理论（DFT）的MedeA VASP工具估算了硅纳米线（SiNW）的性质。在这项研究中，设备输入（I _D – V _GS）和输出（I _D– V _DS）已被分析，并提取了诸如阈值电压，I _On / I _Off比，漏极引起的势垒降低和亚阈值斜率之类的参数，并在SiNWFET和CNTFET器件之间进行了比较。结果指向基于DFT的材料参数估计，以结合量子效应，并在10 nm以下使用基于SiNW / CNT的GAA结构以满足缩放目标。结果表明，对于许多高性能和低功率器件应用而言，具有GAA几何形状的SiNWFET和CNTFET器件可以更好地替代传统MOSFET和FinFET。