Abstract

The current–voltage characteristics of silicon photodiodes before and after irradiation by γ-quanta with an energy of 1.25 MeV and an irradiation dose of 0.5 mrad are investigated. It is established that the reverse currents are determined by the Poole–Frenkel mechanism in a strong electric field with the influence of electron–phonon interaction. A procedure is developed and the parameters of the electron–phonon interaction described by the single-coordinate configuration model are calculated from the reverse current–voltage characteristics. It is assumed that divacancy-oxygen centers in silicon, which determine the reverse photodiode currents, are formed due to γ-ray irradiation.

中文翻译：

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电子-声子相互作用和γ射线辐照对硅光电二极管反向电流的影响

摘要

研究了能量为1.25 MeV，辐射剂量为0.5 mrad的γ量子辐照前后硅光电二极管的电流-电压特性。可以确定，反向电流是由Poole-Frenkel机理在强电场中受电子-声子相互作用影响而确定的。制定了程序，并根据反向电流-电压特性计算了单坐标配置模型描述的电子-声子相互作用的参数。假定由于γ射线的照射而形成了决定反向光电二极管电流的硅中的空位氧中心。