Semiconductors ( IF 0.7 ) Pub Date : 2021-02-03 , DOI: 10.1134/s1063782621010188 I. E. Tyschenko , R. Zhang
Abstract
Interest in creating and studying silicon-based InSb nanocrystals is due to the need for hybrid integrated circuits involving elements with different functional properties. Optical phonons localized in low-dimension crystals can affect both the optical and electrical properties of these crystals. The optical-phonon properties of InSb nanocrystals ion-beam synthesized in silicon and InSb nanocrystals formed in SiO2 layers by ion-beam synthesis and rf magnetron sputtering are compared. The properties of optical phonons in InSb nanocrystals are explained in terms of the effect of the structural properties of the surrounding matrix.
中文翻译:
Si和SiO 2基质中合成的InSb纳米晶体的结构和光学声子性质
摘要
对创建和研究基于硅的InSb纳米晶体的兴趣是由于需要包含具有不同功能特性的元素的混合集成电路。定位在低维晶体中的光子会影响这些晶体的光学和电学性质。比较了通过离子束合成和射频磁控溅射在硅中合成的InSb纳米离子束和在SiO 2层中形成的InSb纳米晶体的光子声子性能。InSb纳米晶体中的光学声子的性质是根据周围基质的结构性质的影响来解释的。