Abstract

The incorporation and activation of arsenic from tris(dimethylamino)arsine in CdTe layers grown by metal-organic chemical vapor deposition from dimethylcadmium and diisopropyltellurium on GaAs substrates are investigated. The incorporation of arsenic into CdTe depends on the crystallographic orientation of the layers and increases in the series (111)B → (100) → (310). The arsenic concentration in the CdTe layers is proportional to the tris(dimethylamino)arsine flow rate at a power of 1.4 and increases with decreasing diisopropyltellurium/dimethylcadmium ratio from 1.4 to 0.5. After deposition, the CdTe:As layers have p-type conductivity with an arsenic concentration of 1 × 10¹⁷–7 × 10¹⁸ cm^–3 and a hole concentration of 2.7 × 10¹⁴–4.6 × 10¹⁵ cm^–3, respectively; the fraction of electrically active arsenic does not exceed ~0.3%. After annealing in argon (250–450°C), the highest hole concentration is 1 × 10¹⁷ cm^–3, and the arsenic activation efficiency is ~4.5%. The ionization energy of arsenic determined from the temperature dependence of the hole concentration is in the range of 98–124 meV. The low-temperature photoluminescence spectra of the layers have an emission peak with an energy of ~1.51 eV, which can be attributed to donor–acceptor recombination, where As_Te is an acceptor with an ionization energy of ~90 meV.

中文翻译：

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二甲基镉和二异丙基碲沉积CdTe层时的砷掺杂

摘要

研究了三（二甲基氨基）ar在砷化镓中砷的掺入和活化，该碲化镉是通过在GaAs衬底上由二甲基镉和二异丙基碲进行金属有机化学气相沉积而生长的CdTe层中的。砷掺入CdTe取决于层的晶体学取向，并且以（111）B→（100）→（310）系列增加。CdTe层中的砷浓度与三（二甲基氨基）ar流速成正比，功率为1.4，并且随着二异丙基碲/二甲基镉比从1.4降低到0.5而增加。沉积后，CdTe：As层具有p型导电性，砷浓度为1×10 ¹⁷ –7×10 ¹⁸ cm ^–3，空穴浓度为2.7×10¹⁴ –4.6×10 ¹⁵ cm ^–3；电活性砷的含量不超过〜0.3％。在氩气中（250–450°C）退火后，最高的空穴浓度为1×10 ¹⁷ cm ^–3，砷的活化效率为〜4.5％。由空穴浓度的温度依赖性确定的砷的电离能在98–124 meV的范围内。这些层的低温光致发光光谱具有约1.51 eV的能量的发射峰，这可以归因于施主-受主复合，其中As _Te是电离能为〜90 meV的受主。