Abstract

This paper presents a finite-element-based two-dimensional numerical simulation study of the vertical channel engineering approaches for controlling the short-channel effects (SCEs) in organic transistors based on thin-film transistor technology (OTFTs). The impact of gate-oxide thickness T_Ox scaling and usage of high-permittivity gate dielectric material has been analyzed for a bottom-contact organic thin-film transistors at channel length of 0.7 μm. The techniques have been used to investigate the impact on drain-induced barrier lowering (DIBL), sub-threshold slope, and I_On/I_Off ratio. The results have shown a significant reduction in values of DIBL and sub-threshold slope in short-channel OTFTs when either of the channel engineering techniques are employed. A high I_On/I_Off ratio of the order of ~10⁷ has been achieved using a high-permittivity gate-oxide material. It has been observed that using a high-permittivity gate dielectric material, a peak value of I_On/I_Off ratio can be achieved for an equivalent oxide thickness of 5 nm. The results suggest that the desirable transistor performance can be achieved through proper selection of gate-oxide material and thickness.

中文翻译：

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使用垂直通道工程技术优化短通道长度有机薄膜晶体管的器件性能

摘要

本文针对基于薄膜晶体管技术（OTFT）的有机晶体管中控制短沟道效应（SCE）的垂直沟道工程方法，进行了基于有限元的二维数值模拟研究。对于沟道长度为0.7μm的底部接触有机薄膜晶体管，已经分析了栅极氧化物厚度T _Ox缩放和高介电常数栅极介电材料的使用的影响。该技术已用于研究对排水诱导的势垒降低（DIBL），亚阈值斜率和I _On / I _Off的影响比。结果表明，采用任何一种通道工程技术时，短通道OTFT的DIBL值和亚阈值斜率都会大大降低。使用高介电常数的栅极氧化物材料已经实现了约10 ⁷的高I _On / I _Off比。已经观察到，使用高介电常数栅极电介质材料，对于5nm的等效氧化物厚度，可以实现I _On / I _Off比的峰值。结果表明，所希望的晶体管的性能可通过栅极氧化物的材料和厚度的适当选择来实现。