A 632.8-nm radiation-induced change in the conductivity of a regular domain structure (RDS) formed in a 5% MgO:LiNbO₃ crystal has been detected for the first time. As a result, the relaxation rate for the Bragg diffraction efficiency on the RDS, which is observed after the application of an external electric field, increases with the intensity of a probe beam. This dependence is linear in the initial stage of relaxation caused by the screening of the external field because of the redistribution of charges over tilted conductive domain walls of the RDS. For the probe beam with an intensity of 49 mW/mm², the induced effective conductivity of the RDS, which is estimated as σ_eff = 3.5×10⁻⁹Ω⁻¹m⁻¹, is more than four orders of magnitude higher than the dark conductivity of the single-domain MgO:LiNbO₃ sample.

首次检测到在5％MgO：LiNbO ₃晶体中形成的规则域结构（RDS）的电导率发生了632.8 nm的变化。结果，在施加外部电场之后观察到的RDS上的布拉格衍射效率的弛豫率随着探测束的强度而增加。由于电荷在RDS倾斜的导电畴壁上的重新分布，在外部电场屏蔽引起的弛豫初期，这种依赖性是线性的。对于具有49毫瓦/毫米的强度探测束²，所述RDS的感应有效导电性，其被估计为σ _EFF = 3.5×10 ^-9 Ω ^-1米^-1，比单畴MgO：LiNbO ₃样品的暗电导率高四个数量级。