In advanced semiconductor manufacturing, deep hydrophilic nanoholes are found in various applications, which require a wet clean after patterning. In this work, we use an in-situ ATR-FTIR spectroscopy technique to characterize the wetting of nanoholes in a silica matrix by UPW and electrolyte solutions. Besides, water structuring in the nanoholes was characterized by an analysis of the OH stretching peak, while monitoring the dissolution of CO₂ in the wetted nanoholes allowed characterizing the diffusivity and the permittivity in the nano-confined solutions. The formation of gas pockets or nanobubbles upon wetting of nanoholes was evidenced by heating tests showing an hysteresis in plots of the OH stretching to bending ratio when temperature was decreased. This was accompanied by water structuring that was characterized by a large fraction of the OH stretching peak showing up at frequencies higherthan that of ice. Dissolution of CO₂ in confined solutions showed a solubility higher by a factor up to about 50 compared to bulk UPW, indicating a decrease in permittivity. The wetting time decreased significantly by heating the solution, while the addition of NaI or CoCl₂ at 1 M concentration, respectively a structure making or breaking salt, had no significant effect at room temperature. Finally, a slower diffusion, as measured with CO₂, was most likely the cause of the surprisingly long lifetime of the nanobubbles formed upon wetting of the nanoholes.

在先进的半导体制造中，在各种应用中都发现了深层的亲水性纳米孔，在图案化后需要进行湿法清洁。在这项工作中，我们使用原位ATR-FTIR光谱技术来表征UPW和电解质溶液对二氧化硅基质中纳米孔的润湿。此外，纳米孔中的水结构化是通过分析OH拉伸峰，同时监测CO ₂的溶解来表征的润湿的纳米孔中的纳米粒子允许表征纳米受限溶液中的扩散率和介电常数。通过加热试验证明在润湿纳米孔时形成气穴或纳米气泡，该加热试验显示当温度降低时，OH拉伸至弯曲比的曲线具有滞后性。这伴随着水的结构化，其特征在于大部分OH拉伸峰以高于冰的频率出现。与大体积UPW相比，CO ₂在密闭溶液中的溶解度显示出高达约50的溶解度，表明介电常数降低。通过加热溶液，同时添加NaI或CoCl ₂，润湿时间显着减少在室温下，在1 M浓度下，分别形成盐或破坏盐的结构没有明显影响。最后，用CO ₂测得的较慢的扩散最可能是由于润湿纳米孔而形成的纳米气泡出乎意料的长寿命的原因。