Carrier species in arsenic-implanted p– and n–type Hg_0.7Cd_0.3Te films grown by molecular-beam epitaxy were investigated with the use of the Hall-effect studies and mobility spectrum analysis. The implantation was performed with ion energy 190 or 350 keV and ion fluence ranging from 10¹² to 10¹⁵ cm⁻². A substantial difference between carrier species in Hg_0.7Cd_0.3Te and Hg_0.8Cd_0.2Te films subjected to arsenic implantation and post-implantation activation annealing was established. In particular, arsenic implantation in p–type Hg_0.7Cd_0.3Te in most cases lead to the formation of n⁺–p– (not n⁺–n–p–) structures, and in n–type Hg_0.7Cd_0.3Te films post-implantation activation annealing lead to modification of the electrical parameters of the n–type ‘base’, in contrast to Hg_0.8Cd_0.2Te material studied earlier. The difference in carrier species formed in arsenic-implanted Hg_0.7Cd_0.3Te and Hg_0.8Cd_0.2Te films was tentatively explained by different background impurity concentrations in the films with different chemical composition.

利用霍尔效应研究和迁移谱分析，研究了通过分子束外延生长的砷注入的p型和n型Hg _0.7 Cd _0.3 Te薄膜中的载流子种类。以190或350keV的离子能量和10 ¹²至10 ¹⁵ cm ^-2的离子通量进行注入。建立了在Hg _0.7 Cd _0.3 Te和Hg _0.8 Cd _0.2 Te膜中进行了砷注入和注入后活化退火的载体种类之间的显着差异。特别是p型汞中的砷植入_0.7 Cd _0.3 Te在大多数情况下会导致形成n ⁺ –p–（不是n ⁺ –n–p–）结构，而在n–型Hg _0.7 Cd _0.3 Te膜中，植入后的活化退火会导致n ⁺ -p-的改性。与先前研究的Hg _0.8 Cd _0.2 Te材料相比，n–型“碱”的电参数。砷注入的Hg _0.7 Cd _0.3 Te和Hg _0.8 Cd _0.2中形成的载体种类的差异尝试用具有不同化学组成的薄膜中不同的背景杂质浓度来解释Te薄膜。