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Photoluminescence and Boosting Electron–Phonon Coupling in CdS Nanowires with Variable Sn(IV) Dopant Concentration
Nanoscale Research Letters ( IF 5.418 ) Pub Date : 2021-01-29 , DOI: 10.1186/s11671-021-03485-3
Yuehua Peng , Yuan Luo , Weichang Zhou , Xuying Zhong , Yanling Yin , Dongsheng Tang , Bingsuo Zou

High-quality Sn(IV)-doped CdS nanowires were synthesized by a thermal evaporation route. Both XRD and Raman scattering spectrum confirmed the doping effect. The room temperature photoluminescence (PL) demonstrated that both near bandgap emission and discrete trapped-state emission appeared simultaneously and significantly, which were attributed to the strong exciton trapping by impurities and electron–phonon coupling during the light transportation. The PL intensity ratio of near bandgap emission to trapped-state emission could be tune via doped Sn(IV) concentration in the CdS nanowires. It is interesting that the trapped-state emission shows well separated peaks with the assistance of 1LO, 2LO, 4LO phonons, demonstrating the boosting electron–phonon coupling in these doped CdS nanowires. The influence of Sn(IV) dopant is further revealed by PL lifetime decay profile. The optical micro-cavity also plays an important role on this emission process. Our results will be helpful to the understanding of doping modulated carrier interaction, trapping and recombination in one-dimensional (1D) nanostructures.



中文翻译:

具有可变Sn(IV)掺杂剂浓度的CdS纳米线中的光致发光和增强电子-声子耦合

通过热蒸发途径合成了高质量的Sn(IV)掺杂的CdS纳米线。XRD和拉曼散射光谱均证实了掺杂效果。室温光致发光(PL)表明,近带隙发射和离散捕获态发射同时并显着出现,这归因于光传输过程中杂质和电子-声子耦合引起的强激子俘获。可以通过CdS纳米线中掺杂的Sn(IV)浓度来调节近带隙发射与捕获态发射的PL强度比。有趣的是,在1LO,2LO,4LO声子的帮助下,俘获态发射显示出分离良好的峰,表明这些掺杂的CdS纳米线中的电子-声子耦合增强。PL寿命衰减曲线进一步揭示了Sn(IV)掺杂剂的影响。光学微腔在此发射过程中也起着重要作用。我们的结果将有助于理解在一维(1D)纳米结构中掺杂调制的载流子相互作用,俘获和复合。

更新日期:2021-01-29
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