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Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers
npj 2D Materials and Applications ( IF 9.7 ) Pub Date : 2021-01-28 , DOI: 10.1038/s41699-020-00197-7
Daniil Marinov , Jean-François de Marneffe , Quentin Smets , Goutham Arutchelvan , Kristof M. Bal , Ekaterina Voronina , Tatyana Rakhimova , Yuri Mankelevich , Salim El Kazzi , Ankit Nalin Mehta , Pieter-Jan Wyndaele , Markus Hartmut Heyne , Jianran Zhang , Patrick C. With , Sreetama Banerjee , Erik C. Neyts , Inge Asselberghs , Dennis Lin , Stefan De Gendt

The cleaning of two-dimensional (2D) materials is an essential step in the fabrication of future devices, leveraging their unique physical, optical, and chemical properties. Part of these emerging 2D materials are transition metal dichalcogenides (TMDs). So far there is limited understanding of the cleaning of “monolayer” TMD materials. In this study, we report on the use of downstream H2 plasma to clean the surface of monolayer WS2 grown by MOCVD. We demonstrate that high-temperature processing is essential, allowing to maximize the removal rate of polymers and to mitigate damage caused to the WS2 in the form of sulfur vacancies. We show that low temperature in situ carbonyl sulfide (OCS) soak is an efficient way to resulfurize the material, besides high-temperature H2S annealing. The cleaning processes and mechanisms elucidated in this work are tested on back-gated field-effect transistors, confirming that transport properties of WS2 devices can be maintained by the combination of H2 plasma cleaning and OCS restoration. The low-damage plasma cleaning based on H2 and OCS is very reproducible, fast (completed in a few minutes) and uses a 300 mm industrial plasma etch system qualified for standard semiconductor pilot production. This process is, therefore, expected to enable the industrial scale-up of 2D-based devices, co-integrated with silicon technology.



中文翻译:

反应等离子体清洁和过渡金属二卤化硅单分子膜的修复

二维(2D)材料的清洁是利用其独特的物理,光学和化学特性在制造未来设备中必不可少的步骤。这些新兴的2D材料的一部分是过渡金属二卤化物(TMD)。到目前为止,对“单层” TMD材料清洁的了解有限。在这项研究中,我们报告了使用下游H 2等离子体清洁MOCVD生长的单层WS 2的表面。我们证明了高温处理是必不可少的,它可以最大程度地去除聚合物,并减轻对WS 2造成的损害以硫空位的形式出现。我们表明,低温原位羰基硫化物(OCS)浸泡是除高温H 2 S退火外再硫化材料的有效方法。在背栅场效应晶体管上测试了本工作中阐明的清洁工艺和机理,证实了通过H 2等离子体清洁和OCS还原相结合可以保持WS 2器件的传输性能。基于H 2的低损伤等离子体清洗OCS的重现性强,速度快(几分钟即可完成),并使用符合标准半导体试验生产要求的300毫米工业等离子蚀刻系统。因此,期望该工艺能够实现与硅技术集成的基于2D的设备的工业放大。

更新日期:2021-01-28
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