Abstract

The technology of mounting a crystal of a semiconductor device is described. The technology of soldering in mounting a crystal of a semiconductor device is presented. The question of using lead solders for soldering silicon crystals is considered. Methods for the formation of multilayer metallization of the reverse side of the crystal are considered and the optimal technology is selected. The parameters of the reliability of the crystal’s connection to the transistor’s case are checked.

中文翻译：

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形成与硅晶体管漏极区域可靠接触的纳米金属层技术

摘要

描述了安装半导体器件的晶体的技术。提出了在安装半导体器件的晶体中进行焊接的技术。考虑了使用铅焊料焊接硅晶体的问题。考虑了形成晶体背面的多层金属化的方法，并选择了最佳工艺。检查晶体与晶体管外壳连接的可靠性参数。