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Effect of Point Defects on the Electromigration Rate at the Interface of Joined Materials
Russian Microelectronics Pub Date : 2021-01-27 , DOI: 10.1134/s1063739720050054
T. M. Makhviladze , M. E. Sarychev

Abstract

In this paper, we develop the theoretical concepts that allow establishing a relationship between the HEM activation energy of the electromigration of the intrinsic ions of a conductive material along the boundary of its compound (interface) with another (dielectric) material and the work Wa of the reversible separation of materials along this interface. The relationship between the energy and the work is established to be linear, that is consistent with the available experimental data. In the paper, we show and analyze the possibility of changing the HEM activation energy with the help of nonequilibrium point defects (vacancies and atomic impurities) embedded in the volumes of the connected materials. This effect can significantly affect the electromigration rate along the interface. In the case when point defects are interstitial impurities, the conditions under which there is an increase or decrease in HEM with an increase in the concentration of defects are analytically obtained and studied, and their dependence on temperature is found. Estimates of impurity concentrations that lead to a noticeable change in the HEM magnitude are provided. The possibilities of using the effect of embedded impurities on the time until metallization systems fail are considered.



中文翻译:

点缺陷对连接材料界面电迁移率的影响

摘要

在本文中,我们发展了理论概念,该理论概念允许在导电材料的本征离子沿着其化合物(界面)与另一种(电介质)材料的边界电迁移的H EM活化能与功W之间建立关系。的材料沿该接口的可逆分离。能量和功之间的关系被建立为线性,这与可用的实验数据一致。在本文中,我们展示并分析了更改H EM的可能性借助嵌入连接的材料体积中的非平衡点缺陷(空位和原子杂质)来获得活化能。该效应会显着影响沿界面的电迁移速率。在点缺陷为间隙杂质的情况下,通过解析求出H EM随缺陷浓度的增加而增加或减少的条件,发现它们对温度的依赖性。提供了导致H EM值发生明显变化的杂质浓度的估算值。考虑了在金属化系统失效之前利用嵌入杂质对时间的影响的可能性。

更新日期:2021-01-28
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