Abstract

In this paper, we investigate the kinetics and mechanisms of reactive-ion etching of Si and SiO₂ in the plasma of an HBr + O₂ mixture with a variable initial composition under conditions of the high-frequency (13.56 MHz) inductive discharge. In the experimental and theoretical (model) analysis of the plasma parameters, the key plasma-chemical processes that form the stationary composition of the gas phase are identified and the densities of active particle fluxes onto the surface under processing are determined. It is found that the increase in the O₂ concentration in the plasma-forming mixture is accompanied by a decrease in the kinetic coefficients (probability of effective interaction and etching yield) that characterize the heterogeneous stages of the etching process. It is assumed that the main mechanism of this effect is the oxidation of SiBr_x etching products to low volatile compounds of the SiBr_xO_y type.

中文翻译：

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HBr + O 2混合物等离子体中Si和SiO 2反应离子刻蚀的动力学及机理

摘要

在本文中，我们研究了在高频（13.56 MHz）感应放电条件下具有可变初始组成的HBr + O ₂混合物的等离子体中Si和SiO ₂的反应离子刻蚀动力学和机理。在等离子体参数的实验和理论（模型）分析中，确定了形成气相固定成分的关键等离子体化学过程，并确定了在处理过程中进入表面的活性粒子通量的密度。发现O ₂的增加在等离子体形成混合物中的浓度升高伴随着表征蚀刻工艺的异质阶段的动力学系数（有效相互作用的概率和蚀刻产率）降低。假定这种作用的主要机理是将SiBr _x蚀刻产物氧化为SiBr _x O _y型低挥发性化合物。