Silicon field emitter arrays (FEAs) with different tip sizes and quantities were fabricated by saw dicing and anisotropic wet chemical etching by tetramethylammonium hydroxide. The tip is formed by the different etching rates of the crystal facets leading to a sharp pyramid based on {103} planes on the top and a hexadecagon based on {331} and {221} planes on the bottom. Electrical measurements at 10⁻⁵mbar up to 10 μA show good reproducibility for FEAs with the same process parameters and higher uniformity and stability with an increasing number of tips. Constant current measurements at the same conditions and 10 μA show a mean electric field increase of about 0.06(3) V/(μm h) for p-type FEAs with a tip quantity of 3600. The shift increases with lower tip quantity and is higher for n-type FEAs compared to p-type. The degradation during the constant current measurement of n-type samples is found to be partly reversible by heating to 200 °C during emission. In contrast, heating of p-type FEAs induced further degradation instead of a regeneration effect.

中文翻译：

---

通过划片和湿法化学蚀刻制造的硅场发射器

通过锯切和通过氢氧化四甲铵进行各向异性的湿法化学刻蚀，制造了具有不同尖端尺寸和数量的硅场发射体阵列（FEA）。尖端由晶体刻面的不同蚀刻速率形成，从而导致顶部基于{103}平面的锐角金字塔和底部基于{331}和{221}平面的六边形。在10的电气测量^-5 mbar至10  μ阿显示良好的再现性，用于与相同的工艺参数和较高的均匀性和稳定性与越来越多的提示FEAS。在相同条件下和10μA的恒定电流测量结果 表明，平均电场增加了约0.06（3）V /（μm h）对于尖端数量为3600的p型FEA。位移随尖端数量的减少而增加，与p型相比，n型FEA的位移更大。通过在发射过程中加热到200°C，发现在n型样品的恒流测量过程中的劣化可部分逆转。相反，加热p型FEA会引起进一步的降解，而不是产生再生作用。