ABSTRACT

Ultrashallow doping is required for both classical field-effect transistors in integrated circuits and revolutionary quantum devices in quantum computing. In this review, we give a brief overview on recent research advances in three technologies to form ultrashallow doping, namely molecular monolayer doping, molecular beam epitaxy, and low energy ion implantation. A research perspective will be provided at the end of this review.

中文翻译：

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硅超浅掺杂的研究进展

摘要

集成电路中的经典场效应晶体管和量子计算中的革命性量子器件都需要超浅掺杂。在这篇综述中，我们简要概述了形成超浅掺杂的三种技术的最新研究进展，即分子单层掺杂，分子束外延和低能离子注入。在这篇评论的结尾将提供研究视角。