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A cryogenic CMOS chip for generating control signals for multiple qubits
Nature Electronics ( IF 34.3 ) Pub Date : 2021-01-25 , DOI: 10.1038/s41928-020-00528-y
S. J. Pauka , K. Das , R. Kalra , A. Moini , Y. Yang , M. Trainer , A. Bousquet , C. Cantaloube , N. Dick , G. C. Gardner , M. J. Manfra , D. J. Reilly

Scaled-up quantum computers will require control interfaces capable of the manipulation and readout of large numbers of qubits, which usually operate at millikelvin temperatures. Advanced complementary metal–oxide–semiconductor (CMOS) technology is an attractive platform for delivering such interfaces. However, this approach is generally discounted due to its high power dissipation, which can lead to the heating of fragile qubits. Here we report a CMOS-based platform that can provide multiple electrical signals for the control of qubits at 100 mK. We demonstrate a chip that is configured by digital input signals at room temperature and uses on-chip circuit cells that are based on switched capacitors to generate static and dynamic voltages for the parallel control of qubits. We use our CMOS chip to bias a quantum dot device and to switch the conductance of a quantum dot via voltage pulses generated on the chip. Based on measurements from six cells, we determine the average power dissipation for generating control pulses of 100 mV to be 18 nW per cell. We estimate that a scaled-up system containing a thousand cells could be cooled by a commercially available dilution refrigerator.



中文翻译:

用于为多个量子位生成控制信号的低温 CMOS 芯片

放大的量子计算机将需要能够操纵和读出大量量子比特的控制接口,这些量子比特通常在毫开尔文温度下运行。先进的互补金属氧化物半导体 (CMOS) 技术是提供此类接口的有吸引力的平台。然而,这种方法通常由于其高功耗而被打折,这可能导致脆弱的量子位发热。在这里,我们报告了一个基于 CMOS 的平台,该平台可以提供多个电信号来控制 100 mK 的量子比特。我们演示了一种芯片,该芯片在室温下由数字输入信号配置,并使用基于开关电容器的片上电路单元来生成用于并行控制量子位的静态和动态电压。我们使用我们的 CMOS 芯片来偏置量子点器件,并通过芯片上产生的电压脉冲来切换量子点的电导。根据对六个电池的测量,我们确定生成 100 mV 控制脉冲的平均功耗为每个电池 18 nW。我们估计一个包含一千个细胞的放大系统可以通过市售的稀释冰箱进行冷却。

更新日期:2021-01-25
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