In this article, the electrical behavior of laterally grown novel short-channel III–V/Si heterostructure double gate triple material PiN tunneling graphene nanoribbon field effect transistor (DG-TM-PiN-TGNFET) has been studied based on their quantum mechanical effect (QME). Firstly, by varying the device process parameters of the novel TFET structure, the DC parameter responses viz. threshold voltage, electric field and surface potential are investigated. Further these responses are analyzed by considering the QME for better device performance. Two-dimensional numerical device simulator (SILVACO TCAD) tool is used for simulating the quantum and semi-classical models. The simulation work has been validated by extensive analytical modeling, that reflected in our accurate graphical representations. Finally, to investigate the QME effect in circuit level applications, an TFET inverter circuit has been designed and its DC performance viz. power dissipation and propagation delay analysis is performed.

在本文中，基于其量子力学效应，研究了横向生长的新型短沟道III–V / Si异质结构双栅极三材料PiN隧穿石墨烯纳米带场效应晶体管（DG-TM-PiN-TGNFET）的电学行为（ QME）。首先，通过改变新颖的TFET结构的器件工艺参数，DC参数响应即。研究了阈值电压，电场和表面电势。通过考虑使用QME获得更好的设备性能来进一步分析这些响应。二维数值设备模拟器（SILVACO TCAD）工具用于模拟量子模型和半经典模型。仿真工作已经通过广泛的分析模型进行了验证，这些模型反映在我们准确的图形表示中。最后，为了研究QME在电路级应用中的效果，设计了一个TFET逆变器电路，其直流性能也得以体现。进行功耗和传播延迟分析。