Properties of epitaxial PbZr_0.2Ti_0.8O₃ (PZT) films deposited on Si substrates were investigated for integration in the present CMOS technology. Polarization is downward oriented, in association with the presence of an internal electric field, and has a lower value compared to the PZT films deposited on single crystal perovskite SrTiO₃ (STO) substrates (40 µC/cm² versus 80 µC/cm²), while the dielectric constant is larger (180 versus 120). Large value for the pyroelectric coefficient was also found, 1.22 × 10⁻³C/m²K, as for PZT grown on single crystal STO. The macroscopic ferroelectric and pyroelectric properties appear to be affected by the structural quality and stoichiometry of the PZT film. The changes in the electric properties are an effect of the strain gradients induced by the large difference between the thermal expansion coefficients of PZT and Si substrate, leading in turn to Pb oxidation and antisite defect formation compared to PZT films deposited on STO substrates.

为了在当前的CMOS技术中集成化，研究了沉积在Si衬底上的外延PbZr _0.2 Ti _0.8 O ₃（PZT）膜的性能。与内部电场的存在相关的极化是向下定向的，并且与沉积在单晶钙钛矿SrTiO ₃（STO）基板上的PZT膜相比，极化具有更低的值（40 µC / cm ²与80 µC / cm ²） ，而介电常数较大（180对120）。还发现热电系数较大，为1.22×10 ^-3 C / m ²K，如在单晶STO上生长的PZT。宏观铁电和热电性质似乎受PZT膜的结构质量和化学计量的影响。电性能的变化是由PZT和Si基板的热膨胀系数之间的巨大差异引起的应变梯度的影响，与沉积在STO基板上的PZT膜相比，这反过来导致Pb氧化和形成反位缺陷。