Applied Physics Express ( IF 2.3 ) Pub Date : 2021-01-22 , DOI: 10.35848/1882-0786/abd960 Shohei Rokuno 1 , Jun Suda 1, 2
Due to the large ionization energy of Mg acceptors in GaN, dynamic punch-through will occur in vertical GaN MOSFETs. To avoid this, higher doping and/or a thicker p-body region should be utilized. However, this increases the channel resistance. In this letter, we suggest that the Poole–Frenkel (P–F) effect has significant impact on dynamic punch-through because of the high electric field in the depletion region under a large bias voltage. Systematic TCAD simulations of simplified vertical GaN MOSFET structures were carried out. We show that the device design considering the P–F effect results in a reduction in the increase in channel resistance.
中文翻译:
通过考虑Poole-Frenkel效应来抑制GaN垂直MOSFET中的动态穿通的设计指南
由于GaN中Mg受体的电离能很大,因此在垂直GaN MOSFET中会发生动态穿通。为了避免这种情况,应该使用更高的掺杂和/或更厚的p-体区域。但是,这增加了沟道电阻。在这封信中,我们建议由于在大偏置电压下耗尽区中的高电场,使得Poole-Frenkel(P-F)效应对动态穿通具有重大影响。对简化的垂直GaN MOSFET结构进行了系统的TCAD仿真。我们表明,考虑到P–F效应的器件设计可减少沟道电阻的增加。